High density trench mosfet with single mask pre-defined gate and contact trenches

ABSTRACT

Trench gate MOSFET devices may be formed using a single mask to define gate trenches and body contact trenches. A hard mask is formed on a surface of a semiconductor substrate. A trench mask is applied on the hard mask to predefine a body contact trench and a gate trench. These predefined trenches are simultaneously etched into the substrate to a first predetermined depth. A gate trench mask is next applied on top of the hard mask. The gate trench mask covers the body contact trenches and has openings at the gate trenches. The gate trench, but not the body contact trench, is etched to a second predetermined depth. Conductive material of a first kind may fill the gate trench to form a gate. Conductive material of a second kind may fill the body contact trench to form a body contact.

CLAIM OF PRIORITY

This application is a continuation of and claims the priority benefit ofcommonly-assigned co-pending U.S. patent application Ser. No. 12/362,414entitled “HIGH DENSITY TRENCH MOSFET WITH SINGLE MASK PRE-DEFINED GATEAND CONTACT TRENCHES” filed Jan. 29, 2009, the entire disclosures ofwhich are incorporated herein by reference.

FIELD OF THE INVENTION

This invention generally relates to high density trench MOSFET devicesand more particularly to a method for making gate and contact trenchesof the MOSFET devices with a single mask.

BACKGROUND OF THE INVENTION

A MOSFET transistor that includes a trench gate structure offersimportant advantages over a planar transistor for high current, lowvoltage switching applications. A trench gate of a MOSFET devicetypically includes a trench extending from the source to the drain andhaving sidewalls and a floor that are each lined with a layer ofthermally grown silicon dioxide. The lined trench is filled with dopedpolysilicon. The structure of the trench gate allows less constrictedcurrent flow and, consequently, provides lower values of specificon-resistance. Furthermore, the trench gate makes possible a decreasedcell pitch in an MOSFET channel extending along the vertical sidewallsof the trench from the bottom of the source across the body of thetransistor to the drain below. Channel density is thereby increased,which reduces the contribution of the channel to on-resistance.

A high density trench MOSFET device also includes a contact trench formaking contact to source and body regions. Conventional processes formanufacturing of the high density trench MOSFET devices have used twoindependent masks for making gate trenches and contact trenches. FIG. 1Aand FIG. 1B are cross-sectional views illustrating fabrication of a gatetrench and contact trench of a vertical MOSFET structure of the priorart. As shown in FIG. 1A, a gate trench mask 102 is used to make avertical gate trench 108. In a separate step, shown in FIG. 1B, a trenchcontact mask 104 is used to make a contact trench 110 on a samesubstrate 106 after the gate trench 108 has been formed. However, a maskoverlay issue occurs when two masks 102 and 104 are used to form avertical MOSFET structure because a well controlled spacing between thegate trench and nearby contact trench is required for high densityMOSFET devices, which have increasingly smaller dimensions.

Schemes based on self-alignment processes have been proposed to solvethis mask overlay issue. However, these proposed schemes, which usevarious constructs of alternating oxide and nitride blocking planar orsidewall spacers to create a contact trench that is self-aligned to thegate trench, are complicated to implement. In addition, the spacers mayhave uniformity problems, wherein spacers at the wafer center may bethicker or thinner than those at the wafer edge.

It is within this context that embodiments of the present inventionarise. It would be desirable to develop a process which would use asingle mask to pre-define both gate and contact trenches without usingcomplicated multiple spacer approaches.

BRIEF DESCRIPTION OF THE DRAWINGS

Objects and advantages of the invention will become apparent uponreading the following detailed description and upon reference to theaccompanying drawings in which:

FIGS. 1A-1B are cross-sectional views illustrating fabrication of gatetrench and contact trench according to the prior art.

FIGS. 2A-2T are cross-sectional views illustrating a process of makinggate trench and contact trench of a high density MOSFET device accordingto an embodiment of the present invention.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

Although the following detailed description contains many specificdetails for the purposes of illustration, anyone of ordinary skill inthe art will appreciate that many variations and alterations to thefollowing details are within the scope of the invention. Accordingly,the exemplary embodiments of the invention described below are set forthwithout any loss of generality to, and without imposing limitationsupon, the claimed invention.

Embodiments of the present invention present a process that uses asingle mask to define both gate and contact trenches without utilizingcomplicated multiple spacer approaches. An example of a fabricationprocess according to an embodiment of the present invention is shown inFIGS. 2A-2T.

The process uses a semiconductor substrate 202 as a starting material.The substrate 202 may be divided into multiple die. Each die may includean active cell area 201 and a gate pickup/contact area 203 at theperiphery of a die as shown in FIG. 2A. Generally, the active cell area201 contains multiple cells (e.g., MOSFET cells) having the same orsimilar structure. For the sake of example, a single cell is shown inthe active area 201. This is done to illustrate the general fabricationprocess and is not meant as a limitation on any embodiment of theinvention.

A hard mask 204, made of a suitable material (e.g., oxide) is formed ontop of the semiconductor substrate 202. The thickness of the hard mask204 may be about 0.3 um. A background trench photoresist (not shown) isformed on the hard mask 204 and patterned to define a pattern for thetrenches. Body contact trenches 206 and gate trenches 208 are formed onthe active cell area 201 and gate contact trenches 210 are formed on thegate pickup/contact area 203 by etching away portions of the hard mask204 that are exposed to an etchant through openings in the photoresistand then etching corresponding portions of the underlying semiconductorsubstrate 202 to a first predetermined depth of, e.g., about 0.3 um asshown in FIG. 2B. The photoresist may or may not be removed duringetching of the exposed portions of the underlying semiconductorsubstrate 202. This first masking step predefines the gate trenches,gate contact trenches and body contact trenches. Since the trenches 206,208, 210 are all aligned in a common masking step, issues of non-uniformtrench spacing across a wafer that are inherent to self-alignmentprocesses employing spacers may be avoided.

As shown in FIG. 2C, a gate trench mask 212, e.g., a patterned layer ofa resist, such as a photoresist, may be deposited and patterned on topof the hard mask 204. The gate trench mask 212 includes openings at thegate trenches 208 and gate contact trenches 210 with the openings beinglarger than the dimensions of the trenches 208, 210. The remainingportions of the gate trench mask 212 cover the body contact trenches 206to protect them during a subsequent etch step. As shown in FIG. 2D, thetrenches 208 and 210 are then simultaneously etched deeper into thesemiconductor substrate 202 to a second predetermined depth. Because theopenings in the gate trench mask 212 have wider widths w_(mo) than thewidths w_(t) of the corresponding trenches, and because the hard mask204 has already predefined all trench locations the gate trench mask 212can have a relatively large alignment budget. As a result, overlayissues may be made much more manageable than in the prior art.

The openings may be made wide since the edges of the trenches 208, 210are protected during etching by the hard mask 204. In general, the maskopenings may be made as wide as desired, provided that they do notexpose body contact trenches 206 to undesired etching.

The ability to initiate simultaneous fabrication of the gate trenchesand body contact trenches for trench gate MOSFET devices demanding ahigher packing density of unit cells with a single mask and to form thegate trenches with a second mask having loose alignment tolerances isparticularly advantageous when a high degree of trench spacinguniformity across the wafer is critical in order to achieve stable andconsistent device characteristics, e.g. the threshold voltage, in theactive cell area 201. By way of example, control of the spacing betweenthe body contact trenches 206 and the gate trenches 208 may becomecritical when a spacing S between them is less than about 0.3 microns,e.g., about 0.25 microns or less.

By way of example, and not by way of limitation, the trenches 208, 210may be etched at a sufficient taper angle, e.g., about 87 degrees, tofacilitate gate material backfilling in the trenches, e.g., polysilicongapfilling. Preferably, the hard mask 204 is selectively etched at amuch lower rate than the semiconductor substrate 202. By way of example,and not by way of limitation, the substrate may be preferentially etchedwith an etch selectivity between about 30:1 and about 40:1 relative tothe hard mask 204. Because the gate trench mask 212 covers the bodycontact trenches 206, these trenches are protected from the etch processand are not deepened by the etch process. Because the hard mask 204 isetched at a lower rate than the substrate 202 the etching deepens thetrenches 208, 210 but does not affect the edges of the trenches, whichare protected by the hard mask 204. After etching, a thick layer ofinsulating material 214, such as an oxide, may optionally be formed atthe bottoms of the trenches 208 and 210 to form a thick bottom oxide forthe gate.

The gate trench mask 212 is then removed as shown in FIG. 2E. A uniquesilicon round hole etch, e.g., an isotropic silicon etch, may be carriedout to round off the trench bottom corners to extend the bottom of thetrench to the lateral direction and the vertical direction. A layer ofgate insulating material 216 may be formed, e.g., by an oxidationreaction that forms a gate oxide layer after a standard sacrificialoxide growth and etch cycle on the sidewalls and the bottoms of thetrenches 208 and 210.

A conductive material 218, e.g., in-situ doped or undoped polysilicon,is deposited to fill in the trenches 208 and 210 as shown in FIG. 2F.The thickness of the conductive material 218 is such that it willcompletely fill up all trenches, e.g., 1.2 microns in one design and 0.8microns in another. The conductive material layer 218 may then be etchedback to target depth either above, at, or below the surface ofsemiconductor substrate 202. As shown in FIG. 2G, the conductive layer218 may be etched back below the semiconductor substrate's surface toform a gate 209 in the gate trench and gate contact 211 in the gatecontact trench. In some cases, two or more conductive materials may beused to form these contacts.

As shown in FIG. 2H, a gate trench mask 220, e.g., a photoresist, may bedeposited and patterned on top of the hard mask 204. The gate trenchmask 220 includes openings at the locations of the gate trench 208 andthe gate contact trench 210. The conductive material 218 forming thegate 209, and gate contact 211 and portions of the sidewalls of thetrenches 208 and 210 that are not covered by the conductive material 218may optionally be implanted with suitable dopant species 222, such asArsenic (As), Phosphorus (P), or Boron (B). The dopants 222 may beimplanted perpendicular or at an oblique angle, e.g., 85 degrees,relative to the substrate surface, so that dopants may be implanted intothe sidewalls of the trenches 208, 210. Angled dopant implantation intosidewalls of the trenches may provide a more consistent control ofchannel resistance and device threshold voltage.

As shown in FIG. 2I, the gate trench mask 220 and the hard mask 204 areremoved. The hard mask 204 may be removed using dry etch or wet dip.Uncovered portions of the gate insulating layer 216 may also be removed.An insulating layer 224 may then be formed on top of the semiconductorsubstrate 202 and the conductive material forming the gate 209 and gatecontact 211 as shown in FIG. 2J. By way of example, and not by way oflimitation, the insulating layer 224 may be an oxide layer depositedusing chemical vapor deposition (CVD). The pad insulating layer 224 maythen be etched back to target depth at the surface of the semiconductorsubstrate 202 surface as shown in FIG. 2K. Alternatively, the insulatinglayer 224 may be removed by Chemical Mechanical Polishing (CMP).

A pad insulating layer 226 with a thickness of about 200 Å is then grownor deposited on top of the structure for ion implantation. A body photomask (not shown) is applied on the pad insulating layer 226 for bodyimplantation. Dopants are then implanted into the top portions of thesemiconductor substrate 202 and heat is applied to activate dopant atomsand drive dopant diffusion to form a body region 227 (e.g., a p-type orn-type body region depending on the type of dopants implanted) in thesubstrate 202 as shown in FIG. 2L. The heat treatment also drivesdopants to a target p/n junction J indicated by a dashed line.

A source mask 228 with a gate contact opening 231 may be applied on topof the pad insulating layer 226. The source mask 228 may cover the gatepickup/contact area 203 and leave the active cell area 201 uncovered forsource implantation. Then, standard source dopant implant may beperformed through exposed portions of the pad insulating layer 226 anddiffusion processes may be carried out to form the source regions 229 inthe active cell area 201 as shown in FIG. 2M. These processes may beidentical to corresponding stages of the current standard trench MOSFETprocess.

As shown in FIG. 2N, the source mask 228 is then removed. An inter-layerdielectric (ILD) layer 230 may then be deposited over the surface of thesemiconductor substrate 202. The thickness of the ILD layer 230 may beabout 0.2 um. The ILD layer 230 can be formed by a low temperatureoxidation process with material of silicon oxide, tetraethylorthosilicate (TEOS), phosphosilicate glass (PSG), borophosphosilicateglass (BPSG) or any combination of above.

As shown in FIG. 2O, second source mask 232 having a gate contactopening 233 on top of the gate contact 211 is applied on top of the gatepickup/contact area 203 with the active cell area 201 uncovered. Themask 232 may have the same pattern as the source mask 228. By way ofexample, a common mask e.g., a photomask, may be used to pattern bothmasks 228, 232. The ILD layer 230 may then be removed from the activecell region 201 and from beneath the opening 233 in a subsequent etchstep. The mask 232 may then be removed as shown in FIG. 2P.

As shown in FIG. 2Q, a contact photo mask 236 may be applied on top ofthe active cell area 201 and the gate pickup/contact area 203. Thecontact photo mask 236 includes openings 235 that are wider than thebody contact trenches 206 and an opening 237 narrower than the gatecontact 211. The contact mask 236 covers the gate 209 to protect itduring a subsequent etch step. The insulating material 224 may then beetched back and the etching stopped at the surface of the semiconductorsubstrate 202. Then, standard processes of contact implant and diffusionmay be carried out to form contact regions 234 proximate to the bottomsof the contact trenches 206 as shown in FIG. 2Q. The contact implantalso goes into portions of the source region 229. However, since thesource region 229 is much more heavily doped (e.g., 2-3 orders ofmagnitude higher), the body contact implant does not affect the dopingof the source region 229.

The contact photo mask 236 is then stripped as shown in FIG. 2R.Optionally, the top surface of the semiconductor substrate 202 isslightly etched to remove dopant-induced damage. A subsequent light etchmay be performed to remove insulating material remaining on top ofsource region 229, in the body contact trenches 206 and under theopening 237 above the gate contact 211. Titanium (Ti) and TitaniumNitride (TiN) may now be blanket deposited and then followed bysilicidation to form a Titanium Silicide (TiSi_(x)) layer 238 as shownin FIG. 2S. A conductive material 239, such as Tungsten (W), may then beblanket deposited in the trenches 206 and 210 and then etched back toform conductive plugs. Finally, a metal layer 240, such as AlCu, isblanket deposited on top of the active cell area 201 and the gatepickup/contact area 203 and patterned. In the active cell area 201, themetal layer 240 contacts the source and body.

As shown in FIG. 2T, a metal photo mask (not shown) may be applied forpatterning metal layer 240. The photoresist may be stripped afteretching.

While the above is a complete description of the preferred embodiment ofthe present invention, it is possible to use various alternatives,modifications and equivalents. Therefore, the scope of the presentinvention should be determined not with reference to the abovedescription but should, instead, be determined with reference to theappended claims, along with their full scope of equivalents. Anyfeature, whether preferred or not, may be combined with any otherfeature, whether preferred or not. In the claims that follow, theindefinite article “A”, or “An” refers to a quantity of one or more ofthe item following the article, except where expressly stated otherwise.The appended claims are not to be interpreted as includingmeans-plus-function limitations, unless such a limitation is explicitlyrecited in a given claim using the phrase “means for.”

1. A method for forming vertical gate and gate contact for a trenchMOSFET device, comprising: a) forming a hard mask layer on a surface ofa semiconductor substrate having an active cell area; b) applying atrench mask on the hard mask layer, wherein the trench mask defines abody contact trench and a gate trench at the active cell area; c)simultaneously etching the body contact trench and the gate trench intothe semiconductor substrate to a first predetermined depth; d) applyinga first gate trench mask on top of the hard mask layer, the gate trenchmask having openings at the gate trench but not the body contracttrench; e) etching the gate trench but not the body contact trenchdeeper into the semiconductor substrate to a second predetermined depth;and f) forming conductive material in the gate trench to form a gate. 2.The method of claim 1, wherein the hard mask layer in a) is an oxidelayer.
 3. The method of claim 1, wherein a ratio of the etching rate ofthe semiconductor substrate to the etching rate of the hard mask layeris between 30:1 and 40:1.
 4. The method of claim 1, further comprising,after e), forming a thick bottom insulating layer on a bottom of thegate trench.
 5. The method of claim 1, wherein f) comprises: etchinground holes at bottoms of the body contact trench and the gate trench;forming a gate insulating layer on bottoms and sidewalls of the bodycontact trench and the gate trench; at least partially filling the bodycontact trench and the gate trench with the conductive material; andetching back the conductive material to a target depth.
 6. The method ofclaim 5, further comprising, after f): applying a second gate trenchmask on top of the hard mask layer, the gate trench mask having openingsat locations of the gate trench; implanting dopants through the openingsinto portions of the conductive material in the gate trench and into thesidewalls of portions of the gate trench that are not covered by theconductive material; removing the second gate trench mask; removing thehard mask layer; removing the gate insulating material from the bodycontact trench and at the sidewalls of portions of the gate trench thatare not filled with the conductive material; filling the body contacttrench and the gate trench with an insulating material; and etching backthe insulating material and stopping at the surface of the semiconductorsubstrate.
 7. The method of claim 6, wherein the dopants are implantedat an oblique angle.
 8. The method of claim 1, further comprising: g)forming a body region at a portion at the surface of the semiconductorsubstrate; and h) forming a source region in a portion at a surface ofthe body region in the active cell area.
 9. The method of claim 8,wherein g) comprises: depositing a pad insulating layer on the surfaceof the semiconductor substrate; heating the substrate to a sufficienttemperature to drive diffusion and anneal the pad insulating layer; andimplanting dopants into the surface through the pad insulating layer toform a body region at portions of the semiconductor substrate.
 10. Themethod of claim 8, further comprising: i) forming a metal layer over theactive area in electrical contact with the source and with a bodycontact formed in the body contact trench.
 11. The method of claim 8,further comprising: applying a contact mask on the surface of thesemiconductor substrate at the active cell area; implanting dopants toform body contact regions at portions at a surface of the body regionproximate the bottom of the body contact trench; removing the contactphoto mask; depositing a conductive material into the body contacttrench and etching back the conductive material; depositing a metallayer on the surface of the semiconductor substrate at the active cellarea.
 12. The method of claim 1 wherein the gate trench and the bodycontact trench are separated by a distance less than 0.3 microns. 13.The method of claim 1 wherein the substrate includes a gatepickup/contact area, wherein the trench mask also defines a gate contacttrench at the gate pick up area, wherein c) includes simultaneouslyetching the body contact trench, the gate trench and the gate contacttrench into the semiconductor substrate to the first predetermineddepth, wherein d) includes applying a first gate trench mask on top ofthe hard mask oxide layer, the gate trench mask having openings at thegate trench and the gate contract trench but not the body contracttrench, wherein e) includes simultaneously etching the gate trench andthe gate contact trench but not the body contact trench deeper into thesemiconductor substrate to the second predetermined depth, and whereinf) includes forming conductive material in the gate trench and the gatecontact trench to form the gate and a gate contact respectively.
 14. Themethod of claim 13 wherein f) comprises: etching round holes at bottomsof the body contact trench, the gate trench and the gate contact trench;depositing a gate insulating layer on bottoms and sidewalls of the bodycontact trench, the gate trench and the gate contact trench to form gateinsulator; at least partially filling the body contact trench, the gatetrench and the gate contact trench with conductive material; and etchingback the conductive material to a target depth.
 15. The method of claim14, further comprising, after f): applying a second gate trench mask ontop of the hard mask layer, the gate trench mask having openings atlocations of the gate trench and the gate contact trench; implantingdopants through the openings into portions of the conductive material inthe gate trench and gate contact trench and into the sidewalls ofportions of the gate trench and gate contact trench that are not coveredby the conductive material; removing the second gate trench mask;removing the hard mask layer; removing gate insulating material from thebody contact trench and the sidewalls of the gate trench and gatecontact trench that are not covered with the conductive material;filling the body contact trench, the gate trench with an insulatingmaterial; and etching back the insulating material and stopping at thesurface of the semiconductor substrate.
 16. The method of claim 13,further comprising: g) forming a body region at a portion at the surfaceof the semiconductor substrate; and h) forming a source region in aportion at a surface of the body region in the active cell area using afirst source photo mask.
 17. The method of claim 16, further comprising;i) forming a metal layer over the active area and gate pick up area inelectrical contact with the gate contact and the source and a bodycontact formed in the body contact trench.
 18. The method of claim 16,further comprising: depositing an inter-layer dielectric (ILD) layer onthe surface of semiconductor substrate; applying a second source photomask on a surface of the ILD layer in the gate pick up area, the secondsource mask having an opening at the gate contact trench, wherein theopening is narrower than the gate contact trench's width; removing theILD layer in the active cell region and etching back the ILD layer atthe opening at the gate contact trench to the surface of thesemiconductor substrate; and removing the second source mask.
 19. Themethod of claim 18, further comprising: applying a contact mask on thesurface of the semiconductor substrate at the active cell area and on asurface of the ILD layer at the gate pick up area, wherein the contactmask has openings at locations of the body contact trench and an openingat the gate contact trench; removing a portion of an insulating layerunder the opening at the gate contact trench; implanting dopants to formone or more body contact regions at portions at a surface of the bodyregion proximate the bottoms of the body contact trenches; removing thecontact photo mask; depositing a conductive material into the bodycontact trench and gate contact trench and etching back the conductivematerial; depositing a metal layer on the surface of the semiconductorsubstrate at the active cell area and on top of the ILD layer at thegate pick up area; applying a metal mask on top of the metal layer;etching the metal layer at the gate pick up area; and removing the metalmask.
 20. The method of claim 19 wherein the first source mask and thesecond source mask have the same mask pattern.